摘要
A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit. Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward. In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process. The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50 ℃ to 150 ℃. The bandgap reference has the characteristics of low power and high PSRR.
A bandgap voltage reference is designed to meet the requirements of low power loss, low temperature coefficient and high power source rejection ratio（PSRR） in the intergrated circuit. Based on the analysis of conventional bandgap reference circuit, and combined with the integral performance of IC, the specific design index of the bandgap reference is put forward. In the meantime, the circuit and the layout are designed with Chartered 0. 35μm dual gate CMOS process. The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50℃to 150 ℃. The bandgap reference has the characteristics of low power and high PSRR.
基金
Tianjin Nature Science(08JCZDJC24100)
