Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing
Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing
摘要
Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing(FA) and rapid thermal annealing(RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.
Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing （FA） and rapid thermal annealing （RTA）, respectively. From the Raman spectra and scanning electronic microscope（SEM）, it found that the thin films made by RTA had smooth and perfect structure, while the thin films annealed by FA had a higher degree of structural disorder.
基金
Natural Science Foundation of Henan Province(072300410310)
Key Science and Technology Project of Henan Province(0624250022)
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