PECVD制备AZO(ZnO：Al)透明导电薄膜

Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition

采用PECVD(等离子体增强化学气相沉积)工艺在普通玻璃和Si基上制备出了方块电阻低至89Ω,可见光透过率高达79%,对基体附着力强的多晶态的AZO(ZnO:Al)薄膜.采用PECVD法制备AZO薄膜是一种有益的尝试,AZO透明导电薄膜不仅具有与ITO(透明导电薄膜,如In2O3:Sn)可比拟的光电特性,而且价格低廉、无毒,在氢等离子体环境中更稳定,所获结果对实际工艺条件的选择具有一定借鉴作用和参考价值.

AZO（ZnO： Al） polycrystalline thin films with strong adhesion to the substrate, as low as 89 Ω of sheet electronic resistivity and as high as 79 % of visible light transmittance, are fabricated by PECVD （ plasma enhanced chemical vapor deposition） method on glass and silicon substrate. The AZO film fabricated by PECVD is a useful attempt. The AZO transparent conductive film has the good photovoltaic properties like that of ITO （In2O3 ： Sn） ; moreover, it is cheap, more nontoxic, and more stable in hydrogen plasma environment than ITO. The results obtained are very important to the selection of the technical conditions.