摘要
采用PECVD(等离子体增强化学气相沉积)工艺在普通玻璃和Si基上制备出了方块电阻低至89Ω,可见光透过率高达79%,对基体附着力强的多晶态的AZO(ZnO:Al)薄膜.采用PECVD法制备AZO薄膜是一种有益的尝试,AZO透明导电薄膜不仅具有与ITO(透明导电薄膜,如In2O3:Sn)可比拟的光电特性,而且价格低廉、无毒,在氢等离子体环境中更稳定,所获结果对实际工艺条件的选择具有一定借鉴作用和参考价值.
AZO(ZnO: Al) polycrystalline thin films with strong adhesion to the substrate, as low as 89 Ω of sheet electronic resistivity and as high as 79 % of visible light transmittance, are fabricated by PECVD ( plasma enhanced chemical vapor deposition) method on glass and silicon substrate. The AZO film fabricated by PECVD is a useful attempt. The AZO transparent conductive film has the good photovoltaic properties like that of ITO (In2O3 : Sn) ; moreover, it is cheap, more nontoxic, and more stable in hydrogen plasma environment than ITO. The results obtained are very important to the selection of the technical conditions.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2009年第6期4260-4266,共7页
Acta Physica Sinica
基金
国家教育部留学回国人员科研启动基金资助的课题~~