摘要
文章概括地介绍了磁性隧道结(MTJs)的隧穿磁电阻(TMR)效应的产生机理和特点,主要用途和研究背景以及最近几年的研究进展和现状.对用Al2O3和MgO做绝缘势垒层的MTJs进行了对比,指出用MgO做绝缘势垒层的MTJs的优点.文章还阐明了交换偏置自旋阀(EB-SV)型MTJs的问题和不足,以及新兴的赝自旋阀(PSV)型MTJs的优势.文章最后总结了用于MTJs的各种铁磁层和绝缘势垒层材料,并对TMR材料今后的研究和开发作了展望.
The mechanism, characteristics, primary applications, background, and latest research on the tunnelling magnetoresistance effects of magnetic tunnel junctions （MTJs） are reviewed. Different types of junctions with Al2O3 or MgO insulated barriers are compared, and the merits of the MgO barrier discussed. The problems and disadvantages of exchange-biased spin-valve MTJs as well as the advantages of the promising pseudo-spinvalve junctions are illustrated. Finally, a summary of the materials used for the ferromagnetic layer and insulated barrier is given, and the outlook for further research and development of tunnelling magnetoresistance materials is discussed.
出处
《物理》
CAS
北大核心
2009年第6期420-426,共7页
Physics
基金
兰州大学磁学与磁性材料教育部重点实验室开放基金资助项目
