摘要
Three-dimensional photonic crystal （PC） heterostructures with high quality are fabricated by using a pressure controlled isothermal heating vertical deposition technique. The formed heterostructures have higher quality, such as deeper band gaps and sharper band edges, than the heterostructures reported so far. Such a significant improvement in quality is due to the introduction of a thin TiO2 buffer layer between the two constitutional PCs. It is revealed that the disorder caused by lattice mismatch is successfully removed if the buffer layer is used once. As a result, the formed heterostructures possess the main features in the band gap of constitutional PCs. The crucial role of the thin buffer layer is also verified by numerical simulations based on the finite-difference time-domain technique.
Three-dimensional photonic crystal （PC） heterostructures with high quality are fabricated by using a pressure controlled isothermal heating vertical deposition technique. The formed heterostructures have higher quality, such as deeper band gaps and sharper band edges, than the heterostructures reported so far. Such a significant improvement in quality is due to the introduction of a thin TiO2 buffer layer between the two constitutional PCs. It is revealed that the disorder caused by lattice mismatch is successfully removed if the buffer layer is used once. As a result, the formed heterostructures possess the main features in the band gap of constitutional PCs. The crucial role of the thin buffer layer is also verified by numerical simulations based on the finite-difference time-domain technique.
基金
Project supported by the National Natural Science Foundation of China (Grant No 10674051)
the Program for Innovative Research Team of the Higher Education of Guangdong Province,China (Grant No 06CXTD005)
the Key Program of Extracurricular Research in South China Normal University (SCNU),China (Grant No 08GDKC02)
