摘要
Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons （BMPs） play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature, paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.
Zn1-xMnxO bulks have been prepared by the solid state reaction method. Zn vapor treatment has been carried out to adjust the carrier concentration. For the Zn treated Zn1-xMnxO bulks, analysis of the temperature dependence of resistance and the field dependence of magnetoresistance demonstrates that the bound magnetic polarons （BMPs） play an important role in the electrical transport behavior. The hopping of BMPs dominates the electrical conduction behavior when temperature is below 170 K. At low temperature, paramagnetic Zn1-xMnxO bulks show a large magnetoresistance effect, which indicates that the large magnetoresistance effect in transition-metal doped ZnO dilute magnetic semiconductors is independent of their magnetic states.
基金
Project supported by the National Natural Science Foundation of China (Grant No 50871120)
