摘要
利用低压金属有机化学气相沉积(LP-MOCVD)生长了无铝980 nm InGaAs/InGaAsP/InGaP单量子阱(SQW)激光器,测试了含铝的InGaAs/GaAs/AlGaAs和无铝的InGaAs/InGaAsP/InGaP两种不同材料的980 nmInGaAs SQW激光器在30～70℃范围内的P-I-V特性曲线,对比分析了两种材料系980 nm激光器输出光功率、阈值电流、斜率效率和激射波长随温度的变化,并对InGaAs/InGaAsP/InGaP激光器进行了可靠性实验。
An aluminum-free InGaAs/InGaAsP/InGaP single quantum well （SQW） laser diode （LD） is grown by lowpressure MOCVD. The P-I-V characteristics of Al-free and Al-containing 980-nm InGaAs lasers are tested in temperature range of 30-70 ℃. The variations with temperature of the two different LDs＇ characteristic parameters, including output power, threshold current, slope efficiency, and the wavelength, are analyzed contrastively. The reliability experiments on the InGaAs/InGaAsP/InGaP laser diodes are also carried out.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2009年第6期1356-1359,共4页
Chinese Journal of Lasers
基金
国家863计划(SQ2007AA03Z431230)资助课题
关键词
激光器
大功率激光器
热特性
无铝
特征温度
lasers
high power laser
thermal characteristics
Al-free
characteristic temperature
