利用总积分散射仪研究不同清洗技术下的基片表面粗糙度

Study on Surface Roughness of Substrates under Different Cleaning Techniques by Total Integrated Scatter

为了探讨不同清洗工艺对基片表面微观粗糙度的影响,利用总积分散射(TIS)仪分别对不同条件下超声清洗的K9玻璃基片,End hall离子源清洗的K9玻璃基片和Kaufmann离子源清洗的熔石英基片的表面均方根(RMS)粗糙度进行了系统表征。结果表明,K9玻璃基片经不同条件下的超声波清洗后,由于清洗过程中表面受到损伤,其RMS粗糙度均有所增加;而对于End hall离子源和Kaufmann离子源清洗的基片,其表面RMS粗糙度的变化受清洗过程中离子束流、清洗时间和离子束能量等实验参量的影响较为明显,选择合适的实验参量可以降低基片表面粗糙度。

Total integrated scatter （TIS） is used to measure the root mean square （RMS） roughness of the fused quartz substrates cleaned by Kaufmann ion source and the K9 glass substrates cleaned by ultrasonic and End-hall ion source, respectively, to study the influence of the above cleaning methods on the surface micro-roughness of substrates. It is found that the RMS roughness of the K9 glass substrates cleaned by ultrasonic under different conditions all increases due to the damnification of the substrate surfaces, while the surface RMS roughness of the samples cleaned by End-hall ion source and Kaufmann ion source is significantly affected by the experiment parameters, such as the beam current, the cleaning time, and the energy of the ion beam. The RMS roughness of the samples can be decreased under appropriate experiment conditions.