摘要
In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.
In order to improve the characteristics of the general broad-waveguide 808-nm semiconductor laser diode （LD）, we design a new type quantum well LD with an asymmetric cladding structure. The structure is grown by metal organic chemical vapor deposition （MOCVD）. For the devices with 100-ttm-wide stripe and 1000-/zm-long cavity under continuous-wave （CW） operation condition, the typical threshold current is 190 mA, the slope efficiency is 1.31 W/A, the wall-plug efficiency reaches 63%, and the maximum output power reaches higher than 7 W. And the internal absorption value decreases to 1.5 cm^-1.
基金
supported by the National Natural Science Foundation of China (No.50472068)
the Program for New Century Excellent Talents in University
