摘要
The process of preparing SiC coating by electron beam-physical vapor deposition （EB-PVD） was discussed from viewpoint of thermodynamis. Results show that within the temperature range of 2 700-3 300 K, the ratio of SiC in the SiC coating doesn＇t change much and keeps around 0.7. Purity of the as-deposited SiC coating is not high. To improve the purity of the SiC coating, the SiC ingot is required to not be, necessary in full density but be fine-grained.
The process of preparing SiC coating by electron beam-physical vapor deposition （EB-PVD） was discussed from viewpoint of thermodynamis. Results show that within the temperature range of 2 700-3 300 K, the ratio of SiC in the SiC coating doesn＇t change much and keeps around 0.7. Purity of the as-deposited SiC coating is not high. To improve the purity of the SiC coating, the SiC ingot is required to not be, necessary in full density but be fine-grained.
