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电化学沉积ZnSe薄膜的工艺研究 被引量:1

STUDY ON TECHNOLOGY OF EELECTROCHEMICAL CO-DEPOSITION FOR ZNSE THIN FILMS
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摘要 从理论上分析了硫酸锌和亚硒酸钠在简单酸性溶液中进行电化学共沉积制备ZnSe薄膜的可行性;然后,在硫酸锌和亚硒酸钠的酸性柠檬酸钠电解液体系中进行ZnSe薄膜生长条件系列实验,为了进一步研究电化学沉积参数对薄膜成分和形貌的影响,采用正交试验方法,对pH值、离子的浓度比、电流密度、络合剂、温度等沉积参数进行了进一步详细研究,得到了最佳电化学沉积参数;最后,用分光光度计、扫描电子显微镜(SEM)和X-射线衍射仪(XRD)对薄膜的成分、形貌和结构进行分析和表征,表明该薄膜的化学计量比接近1:1。 Firstly, the feasibility, which ZnSe films were co-deposited in the ZnSO4 and Na2 SeO3 acidic solution by elec- trochemistry, was analyzed theoretically. Then, the ZnSe thin film series experiments were carried on in zinc sulfate and in the selenite sodium electrolyte solution in order to further study the effects thin film ingredient and appearance on elec- trochemical co-deposition the parameter, such as pH value, ratio of ion density, electric current density, complexing agent and temperature. The best electrochemical deposition parameter was obtained through the orthogonal testing. Final- ly, deposited ZnSe films were characterized by scanning electron microscope (SEM), energy dispersion analysis of X-ray (EDAX) and X-beam diffraction meter (XRD), and found the stoichiometric ratio of ZnSe films be close to 1 :1.
出处 《太阳能学报》 EI CAS CSCD 北大核心 2009年第6期778-783,共6页 Acta Energiae Solaris Sinica
关键词 电化学沉积 ZnSe薄膜 沉积参数 正交试验 electrochemical co-deposition ZnSe film deposition parameters orthogonal testing
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参考文献6

  • 1Rumberg A, et al. ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells [J]. Thin Solid Films, 2000, 361-362 : 172-176.
  • 2Samantillek A P, et al. Development of ptoelectronic devices using electrochemically grown thin ZnSe layers[J]. J of Materials Science, 2001, 12: 661-666.
  • 3Kumaresan R, Ichimura M, Arai E. Photochem-ical deposition of ZnSe polycrystalline thin films and their characterization [J]. Thin Solid Films, 2002, 414: 25-30.
  • 4Hao E C, Zhang H, Yang B, et al. Preparation of luminescent polyelectrolyte Cu-Doped ZnSe Nano-partcle multilayer composite films[J]. Journal of Colloid and Interface Science, 2001, 238: 285-290.
  • 5邝生鲁.应用电化学[M].武汉:华中理工大学,1995.
  • 6韩爱珍,林逸青,赵永春,高元恺.GaAs薄膜电沉积机理的初探[J].Journal of Semiconductors,1997,18(5):380-384. 被引量:9

二级参考文献3

  • 1Gao Yuankai,J Appl Phys,1994年,75卷,1期,549页
  • 2王贤仁,光电子材料及应用的某些进展,1988年
  • 3黄德秀,专业化学,1980年

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