金属Cu诱导层对热丝法制备多晶硅薄膜微结构的影响

Influence of Cu-induced layer on microstructure of poly-Si films deposited by hot-wire chemical vapor deposition

采用热丝化学气相沉积法(HWCVD),在金属铜诱导层上成功制备出横向晶粒尺寸在1μm左右、垂直晶粒尺寸达20μm的柱状多晶硅薄膜,其晶化率在95%以上。使用XRD、Raman光谱、扫描电子显微镜(SEM)等分析测试手段研究了灯丝温度在1500～1800℃之间变化时,金属铜诱导层对多晶硅薄膜的微观形貌、结晶性及晶体学生长方向的影响规律。结果表明:金属铜诱导层的引入,在一定温度范围内改善了晶粒尺寸,改变了多晶硅薄膜的择优取向,降低了薄膜的晶化温度,提高了晶化率。

High - quality polycrystalline silicon films composed of large and uniform columnar grains with a moderate lateral grain size of -1 μm, vertical grain size of - 20μm and crystalline fraction （fc） over 95 % have been fabricated on glass substrates with metal Cu - induced layer by hot - wire chemical vapor deposition （HWCVD）. Influence of the Cu - induced layer on the crystallographic growth orientation, the crystalline fraction and the grain sizes of poly - Si films were characterized by means of X - ray diffraction （ XRD）, Raman spectrum and scanning electron microscopy （SEM）. It was found that the grain size and the crystalline fraction of poly - Si films was increased, and the crystallization temperature decreased due to the presence of Cu - induced layer. Moreover, the Cu - induced layer also influenced the crystallographic growth orientation in certain range of hot - filament temperature.