期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

表面金属化对多孔硅光特性的影响(英文) 被引量：1

Effect of surface metallization on optical properties of porous silicon
原文传递
导出
摘要 在室温下使用过滤阴极真空电弧系统在多孔硅表面沉积大约10纳米左右厚度的铜、铝和钛薄膜,并且在真空下800度退火10分钟。多孔硅层是通过电化学腐蚀硅制得。X射线光电子谱、荧光谱,光吸收谱和X射线衍射谱的研究表明退火后,沉积铜和钛的样品出现明显的光吸收红移和硅2p电子能级移动。这是由于在多孔硅表面形成铜和钛的硅化物而引起的晶体场和电子传输变化所造成的。 Cu, AI and Ti films of -10 nm thickness were deposited on porous silicon （PS） at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800℃ for 10 min in vacuum. The PS layers were obtained by anodization of Si wafer. X - ray photoelectron spectroscopy, photoluminescenee （PL）, photo -absorption （PA）, and X -ray diffraction studies revealed that after annealing, Cu - and Ti - deposited samples exhibited obvious PA red - shift and Si - 2p level shift, which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.
作者 潘丽坤 李海波 孙卓 孙长庆
机构地区 华东师范大学物理系纳光电集成与先进装备教育部工程研究中心 新加坡南洋理工大学电子与电气工程学院
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2009年第3期280-284,共5页 Journal of Functional Materials and Devices
基金 Shanghai Natural Science Foundation(No.07ZR14033) Shanghai Pujiang Program(No.08PJ14043) Special Project for Nanotechology of shanghai(No.0752nm011) Applied Materials Shanghai Research & Development Fund(No.07SA12)
关键词 多孔硅 金属化 晶体场 porous silicon metallization crystal field
分类号 TB43 [一般工业技术]
  • 相关文献

参考文献20

  • 1Charrrier J, Guendouz M, Haji L, et al. Porosity Gradient Resulting from Localised Formation of Porous Silicon: The Effect on Waveguiding [ J ]. Physica Status Solidi ( a), 2000, 182 ( 1 ) : 431 - 436.
  • 2Martfn - Palma R J, Perez - Rigueiro J, Martinez - Duart J M. Study of carrier transport in metal/porous silicon/Si structures [ J ]. Journal of Applied Physics, 1999, 86 (12) : 6911 -6914.
  • 3Harraz F A, Tsuboi T, Sasano J, et al. Metal Deposition onto a Porous Silicon Layer by Immersion Plating from Aqueous and Nonaqueous Solutions [ J ]. Journal of The Electrochemical Society, 2002, 149: C456- C462.
  • 4Ansari Z A, Hong K, Lee C. Structural and electrical properties of porous silicon with rf - sputtered Cu films[ J]. Materials Science and Engineering B, 2002, 90 ( 1 - 2 ) : 103 - 109.
  • 5Jeske M, Schultze J W, Arens -Fischer R. Electrical contact to porous silicon by electrodeposition of iron [ J ]. Thin Solid Films, 1996, 276(1 -2) : 40-43.
  • 6Ghosh S, Hong K, Lee C. Structural and physical properties of thin copper films deposited on porous silicon [ J ]. Materials Science and Engineering B, 2002, 96 ( 1 ) : 53 -59.
  • 7Labunov U, Bondarenko V, Glinenko L, et al. Heat treatment effect on porous silicon [ J ]. Thin Solid Films, 1986, 137(1) : 123 -134.
  • 8Yonehara T, Sakaguchi K, Sato N. Epitaxial layer transfer by bond and etch back of porous Si [ J ]. Applied Physics Letters, 1994, 64(16) : 2108 -2110.
  • 9Perez - Rigueiro J, Jimenez C, Perez - Casero R, et al. Nonlinear analysis of the I - V characteristics in Ti/Si and TiSi2/Si Schottky diodes [ J ]. The Journal of Vacuum Science and Technology B, 1996, 14(4) : 2623 -2626.
  • 10Pan Likun, Sun Changqing. Coordination Imperfection Enhanced Electron - Phonon Interaction of nanosolid Si [ J ]. Journal of Applied Physics, 2004, 95 ( 7 ) : 3819 - 3821.

同被引文献41

  • 1Uhlir A.Electrolytic shaping of germanium and silicon[J].Bell System Technical Journal,1956,35(2):333-347.
  • 2Canham L T.Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J].Appl Phys Lett,1990,57(10):1046-1048.
  • 3Canham L T.Gaining light from silicon[J].Nature,2000,408:411-412.
  • 4Lee J S,Cho N H.Nanostructural and photoluminescence features of nanoporous silicon prepared by anodic etching[J].Applied Surface Science,2002,190(1-4):171-175.
  • 5Jung K H,Shih S,Kwong D L.Developments in luminescent porous Si[J].Journal of the Electrochemical Society,1993,140(10):3046-3064.
  • 6Chen Q W,Zhu J S,Li X G,et al.Photoluminescence in porous silicon obtained by hydrothermal etching[J].Physics Letters A,1996,220(4-5):293-296.
  • 7Splinter A,Vitae A,Vitae J S,et al.New porous silicon formation technology using internal current generation with galvanic elements[J].Sensors and Actuators A:Physical,2001,92(1-3):394-399.
  • 8Li X,Bohna P W.A metal-assisted chemical etching in HF/H2O2 produces porous silicon[J].Applied Physics Letters,2000,77(16):2572-2574.
  • 9Ksendzov A,Fathauer R W,George T,et al.Visible photoluminescence of porous Si1-xGex obtained by stain etching[J].Applied Physics Letters,1993,63(2):200-202.
  • 10Richter A,Steiner P,Kozlowski F,et al.Current-induced light emission from a porous silicon device[J].IEEE Electron Device Letters,1991,12:691-692.

引证文献1

二级引证文献1

功能材料与器件学报
2009年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部