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基于蒙特卡罗分析Ⅲ族氮化物输运特性的研究

Research on Ⅲ-nitrides Transport Characteristic by Using Monte Carlo Method
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摘要 利用Silvaco软件中的蒙特卡罗算法,详细研究了Ⅲ-氮化物的速-场特性和低场迁移率特性,数值计算了掺杂浓度和晶格温度对-氮化物输运特性的影响。结果表明,在忽略缺陷和表面粗糙度散射的条件下,Ⅲ-氮化物的强场输运特性取决于材料的谷间散射,且当掺杂浓度小于1e17cm-3时,杂质对速-场特性的影响可忽略不计;而低场迁移率特性则主要受晶格振动散射和电离杂质散射的影响。此外,根据Ⅲ-氮化物速-场特性的模拟结果,对"速度过冲"效应提出一种新的解释。 By using Monte Carlo method involved in the Silvaco software, the paper studies the velocity-field characteristic and the low-field mobility characteristic of Ⅲ-nitrides in detail, numerically calculates the effect of the doping concentration and the crystal-lattice temperature on the Ⅲ-nitrides transport characteristic. It is shown that, with omitting traps and surface roughness, Ⅲ-nitrides high-field transport characteristic depends on their inter-valley scattering, and when the doping concentration is less than le17 cm^-3, the effect of impurity on the velocity-field characteristic can be ignored; the low-field mobility characteristic mainly relies on the crystal-lattice vibration scattering and the ionized-impurity scattering. Moreover, according to the simulation of Ⅲ-nitrides velocity-field characteristic, the paper gets a new description of the velocityshoot effect.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2009年第2期162-166,共5页 Research & Progress of SSE
关键词 蒙特卡罗法 Ⅲ族氮化物 输运特性 monte carlo method Ⅲ-nitride transport characteristic
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参考文献4

  • 1Asif Khan M, Bhattarai A, Huznia J N, et al. High electron mobility transistor based on a GaN/Al2Ga1-x N heterojunction[J]. Appl Phys Lett, 1993, 63: 1214-1215.
  • 2Jacoboni C, Lugli P. The Monte Carlo Method for Semiconductor Device Simulation [M]. New York: Springer, 1989: 104-159.
  • 3Silvaco Company. Mocasim User's Manual[ M].USA, 2002.
  • 4Lwvinshtein M E, Rumyantsev S L, Shur M S. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, and SiGe[M]. Jonh Wiley and Sons, 2001.

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