摘要
利用Silvaco软件中的蒙特卡罗算法,详细研究了Ⅲ-氮化物的速-场特性和低场迁移率特性,数值计算了掺杂浓度和晶格温度对-氮化物输运特性的影响。结果表明,在忽略缺陷和表面粗糙度散射的条件下,Ⅲ-氮化物的强场输运特性取决于材料的谷间散射,且当掺杂浓度小于1e17cm-3时,杂质对速-场特性的影响可忽略不计;而低场迁移率特性则主要受晶格振动散射和电离杂质散射的影响。此外,根据Ⅲ-氮化物速-场特性的模拟结果,对"速度过冲"效应提出一种新的解释。
By using Monte Carlo method involved in the Silvaco software, the paper studies the velocity-field characteristic and the low-field mobility characteristic of Ⅲ-nitrides in detail, numerically calculates the effect of the doping concentration and the crystal-lattice temperature on the Ⅲ-nitrides transport characteristic. It is shown that, with omitting traps and surface roughness, Ⅲ-nitrides high-field transport characteristic depends on their inter-valley scattering, and when the doping concentration is less than le17 cm^-3, the effect of impurity on the velocity-field characteristic can be ignored; the low-field mobility characteristic mainly relies on the crystal-lattice vibration scattering and the ionized-impurity scattering. Moreover, according to the simulation of Ⅲ-nitrides velocity-field characteristic, the paper gets a new description of the velocityshoot effect.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2009年第2期162-166,共5页
Research & Progress of SSE
关键词
蒙特卡罗法
Ⅲ族氮化物
输运特性
monte carlo method
Ⅲ-nitride
transport characteristic