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应变硅NMOS晶体管沟道应变的模拟研究 被引量：2

Study on Channel Strain in Strained-Si NMOS Transistor by Simulation
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摘要 建立了一种基于硅/锗硅异质结构的应变硅NMOS晶体管的有限元模型,通过模拟研究了沟道区的应变分布及其与器件参数的关系。结果表明,提高锗硅虚拟衬底中锗的摩尔组分、减小应变硅层厚度,可以增加沟道应变。此外,应变量还随器件结构长度的增加而增加。研究结果可为应变硅器件的设计、工艺优化提供参考依据。 A finite element model of the strained-Si NMOS transistor based on Si/Si1-x Gex heterogeneous structure has been established. The channel strain distribution and its relation to the device parameters have been investigated by simulation. Results indicate that the channel strain can be increased by increasing the molar fraction of germanium, reducing the thickness of the strained Si layer, and increasing the structure length. These results can provide useful reference for the design and process optimization of the strained-Si based devices.
作者 张庆东 周东 顾晓峰 宋立凡 于宗光
机构地区 江南大学信息工程学院 中国电子科技集团公司第
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2009年第2期175-178,共4页 Research & Progress of SSE
基金 江苏省高等学校大学生实践创新训练计划 教育部新世纪优秀人才支持计划(NCET-06-0484)
关键词 应变硅 锗硅 N沟道金属氧化物半导体 有限元 模拟 strained silicon SiGe NMOS finite element simulation
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献11

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二级参考文献9

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共引文献1

同被引文献14

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固体电子学研究与进展
2009年 第2期

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