期刊文献+

多晶硅铸锭涂层用高纯Si3N4微粉的研究进展与展望 被引量:10

Research Progress and Prospect of High Purity Si_3N_4 Powders Used as Multicrystalline Silicon Ingot Coatings
下载PDF
导出
摘要 本文根据国内外高纯氮化硅微粉制备的研究情况,综述了硅粉直接氮化法、硅亚胺热分解法、气相反应法等几种氮化硅粉末的主要制备方法,介绍了各种制备方法在生产多晶硅铸锭涂层用氮化硅微粉的优缺点,并从产品质量、成本等角度分析比较了各种制备方法的特点,指出了制备多晶硅铸锭用氮化硅粉末的主要发展方向。 Based on the recent research of Si3N4 powders synthesis methods all over the world, some primary methods were comprehensively reviewed, such as the direct nitridation, ammonolysis of Si (NH) 2, vapor deposition. The advantages and disadvantages of each method of making Si3N4 powders for multicrystalline ingot coating were compared, and the characterization of different methods were analyzed in terns of products quality, cost and so on. The main direction for the fabrication and development of Si3N4 fine powder was also developed.
出处 《硅酸盐通报》 CAS CSCD 北大核心 2009年第3期548-552,567,共6页 Bulletin of the Chinese Ceramic Society
基金 国家科技支撑计划(No.:2008BAE60B05)
关键词 多晶硅 氮化硅 微粉 涂层 multicrystalline Si Si3N4 fine powders coatings
  • 相关文献

参考文献44

二级参考文献123

共引文献191

同被引文献95

  • 1张伟娜,谭毅,许富民.显微组织对冶金法制备多晶硅电阻率的影响[J].机械工程材料,2008,32(1):17-20. 被引量:8
  • 2陈光明,景海江.涂层结合强度测定方法和设备[J].理化检验(物理分册),2005,41(z1):157-161. 被引量:1
  • 3邓海,杨德仁,唐骏,席珍强,阙端麟.铸造多晶硅中杂质对少子寿命的影响[J].太阳能学报,2007,28(2):151-154. 被引量:24
  • 4ALEKSANDRA Vuckovic, SNEZANA Boskovic, BRANKO Matovic, MILAN Vlajic, et al. Effect of β-Si3N4 seeds on desiccation and fracture toughness of silicon nitride[J]. Ceramics International, 2006, 32(3): 303-307.
  • 5S. Dumitrica. D. Vizman. J. P. Garandet. Numerical studies on a type of mechanical stirring in directional solidification method of mulltic- rystalline silicon for photovoltaic applications [ J]. Journal of Crystal Growth. 2012,01.011.
  • 6L. J. Liu ,Satoshi Nakano, Koichi Kakimoto. Carbon concentration and particle precipitation during directional solidification of multicrystal- line silicon for solar cells[J]. Journal of Crystal Growth. 2011,310: 2192 -2197.
  • 7M. D. Sabatino, S. Binetti, J. l.ibal, et al. Oxygen distribution on a multicrystalline silicon ingot grown from upgrade metallurgical silicon [ J ]. Solar Energy Materials & Solar Cells. 2011,95:529 -533.
  • 8B. Ryningen, G. Stokkan, M. Kivambe. Growth of dislocation clusters during directional solidification of muhicrystalline silicon ingots[J]. Acta Materialia. 2011,59:7703 - 7710.
  • 9J. Maria,S. B. Piotr,T. S. Katarzyna. Slicon nitride layers of varaious n - content : Technology, properties and structure [ J ]. Thin Solid Fihns. 2011,520 : 1308 - 1312.
  • 10N. Chen, B. F. Liu,S. Y. Qiu,et al. Study of SiC and Si3N4 inclu- sions in industrial multicrystalline silicon ingots grown by directional so- lidification method [ J ]. Materials Science in Semiconductor Processing. 2010,13:231 -238.

引证文献10

二级引证文献18

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部