摘要
介绍了一种新的膜淀积技术-PYROSOL技术的原理和方法,总结了一些化合物薄膜的制备条件。给出了Fe2O3、ZrO2薄膜生长的影响因素。还介绍了SiO2膜的PYROSOL溶胶———凝胶制备方法。
The principle of a new film-forming method, PYROSOL technique, is described. The conditions for the preparation of some compounds are summarized. Combining with the preparation of a gas sensors, The factors of influence on the formation of Fe 2O 3 and ZrO 2 thin films are given. The sol-gel preparation of SiO 2 films by PYROSOL are also concerned.
出处
《传感器技术》
CSCD
1998年第4期9-12,共4页
Journal of Transducer Technology