硅太阳电池用MgF2/ZnS双层减反射薄膜的制备及表征

Preparation and Characterization of MgF_2/ZnS Double-layer Antireflection Films Applied in Silicon Solar Cells

采用真空热蒸发技术,制备出了性能优良的MgF2/ZnS双层减反射薄膜。采用扫描电子显微镜、X射线衍射仪对薄膜的形貌以及结晶形态进行分析,采用椭圆偏振仪测试薄膜的折射系数及厚度,利用反射谱对双层减反射薄膜的减反射性能进行了表征。研究表明:衬底温度为200℃时薄膜附着力、结晶态良好;蒸发速率影响薄膜的表面形态;MgF2/ZnS厚度为110 nm/35 nm时具有最佳减反射效果。

MgF2/ZnS double-layer antireflection films excellent performance were prepared by vacuum thermal evaporation techniques. The surface morphology of the films was analyzed by scanning electron microscope. Crystalline morphology was characterized by X-ray diffraction. Films＇thickness and refractive index was measured by ellipsometer. The film＇s reflectivity was measuread by spectrophotometer. The results show that the films prepared at the substrate tempreture of 200 ℃ get good adhesion and high crystallinity. Evaporation rates strongly affect the film ＇s surface morphology. MgFE/ZnS double-layer antireflection films with thickness of 110 nm/35 nm has the best antireflection.