摘要
运用缺陷化学原理近似计算了Cd0.9Mn0.1Te晶体的点缺陷浓度,得到了晶体成分与理想化学计量比偏离最小时的退火条件。利用该退火条件,指导了Cd0.9Mn0.1Te晶体的两温区退火实验,并分析了退火对晶片性能的影响。结果表明:在973 K,Cd气氛下对Cd0.9Mn0.1Te晶片退火140 h后,晶片(111)面的X射线回摆曲线的FWHM值由退火前的168.8''降至108'',红外透过率由退火前48%提升到64%,接近晶体的理论透过率,电阻率也由退火前的2.643×105Ω.cm提高到4.49×106Ω.cm。由此可见,对生长态的Cd0.9Mn0.1Te晶体进行退火实验能提高晶体的结晶质量,补偿晶体的Cd空位点缺陷,使晶体成分接近理想的化学计量比。
The point defect density of Cd0.9Mn0.1Te crystal was calculated approximately by the quasichemical theory, and obtained the optimum annealing condition in which the deviation from stoichiornetry of the crystal is the least. The two-temperature-zone-annealing experiment was done under this condition and the effects of annealing on the properties of Cd0.9Mn0.1Te were analyzed in detail. The results show that when the as-grown crystal was annealed for 140 h in Cd atmosphere at 973 K, the full-width-at-half- maximum （FWHM） of X-ray rocking curve was reduced from 168.8″to 108″, the IR transmission was improved from 48% to 64%, which is close to the theoretical value. Meanwhile the resistivity is increased from 2.643×10^5Ω·cm to 4.49 ×10^6Ω·cm. The results prove that the annealing treatment of the asgrown Cd0.9Mn0.1Te crystal can improve the crystal quality, compensate Cd vacancy, and homogenise the crystal composition close to the theoretical stoichiometry.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第3期570-575,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.5087211)
