掺杂浓度对电沉积法制备ZnS：Cu光学薄膜影响

Influence of Doping Concentration on ZnS:Cu Optical Thin Films Prepared by Electrodeposition

采用阴极恒电压法在ITO(In2O3-SnO2)导电玻璃表面制备了ZnS∶Cu薄膜,并用X射线衍射仪(XRD)、原子力显微镜(AFM)和光致发光谱仪(PL)研究了掺杂浓度对ZnS∶Cu薄膜的物相组成、显微结构及发光性能的影响。结果表明:控制Cu2+的质量掺杂浓度在0.4%以内,并不会改变ZnS薄膜的物相组成,而且会使薄膜的结晶程度有所提高。研究还发现,在pH=4.0,沉积电压为2 V,掺杂浓度为0.3%的条件下,所制得的ZnS∶Cu薄膜光致发光光谱峰值最大,亮度最高。

ZnS： Cu thin films were prepared on ITO （indium tin oxide） substrates using a constant voltage cathodic electrodeposition process. The as-deposited thin films were characterized by X-ray diffraction （XRD） , atomic force microscopy （AFM） , and photoluminescence spectrum （PL）. The influences of doping concentration on the phase compositions, surface morphologies and optical properties of the films were investigated. The results show that the crystallization of the films can be improved by controlling the doping mass concentration within 0.4% and the phase compositions of ZnS thin films will not been changed . The prepared ZnS： Cu thin films which possess highest fluorescence intensity can be obtained at pH =4.0, U =2 V with the Cu^2＋ doping mass concentration of 0.3%.