摘要
利用分子模拟技术评价了含Cr^(3+)和La^(3+)杂质的t-ZrO_2晶体缺陷的性质。在推导、拟合和验证计算模型的势能参数,以及建立合适的体系模型后,研究了t-ZrO_2晶体的内在缺陷和外来缺陷的性质,预测出:La^(3+)较Cr^(3+)容易掺入t-ZrO_2晶体中;在本研究范围内缺陷簇[La′_(Zr)·V(?)_O·La′_(Zr)]~×最容易生成;La^(3+)掺杂到t-ZrO_2晶体后将阻止Cr^(3+)的进入。
Molecular simulation techniques have bean used to evaluate the defect properties of Cr^3+ and La^3+ doped t-Zirconia after potential parameters being rederived, fit and validated. Suitable system models for different dopant content have been built, in which the largest super cell contains 1296 atoms. A series of intrinsic and extrinsic defects in t-ZrO2 have been studied. Favorable dopant between Cr^3+ and La^3+ (on energetic grounds) is predicted to be La^3+. The formation of [La' Zr ·V"o· La' Zr ]^x is the most favored within three investigated defect clusters. La^3+ pre-doping plays important role in preventing the introduction of Cr^3+ into t-ZrO2.
出处
《计算机与应用化学》
CAS
CSCD
北大核心
2009年第6期717-722,共6页
Computers and Applied Chemistry