HL-1M托卡马克中的硼化

BORONIZATION IN THE HL1M TOKAMAK

用碳硼烷加氦直流辉光放电，在ＨＬ－１Ｍ托卡马克内壁上原位涂覆了含碳硼膜，平均厚度５０—７０ｎｍ，硼碳比约为１６。硼化后器壁条件有了本质的改善，对器壁上氧源的抑制特别显著，也增强了石墨表面抗氢离子和氢原子化学蚀刻的能力。硼化显著改善了等离子体性能和提高了等离子体参数。扰动显著减小，放电稳定性和重复性提高。硼化为低混杂波电流驱动实验创造了良好的壁条件。

L1M 45The inner wall of the HL1M vacuum chamber has been coated in situ with a boroncontaining carbon film by means of DC glow discharge in helium and carborane. The average film thickness is 50-70nm and the ratio of boron to carbon in the layer is about 1∶6. Wall conditions are improved dramatically by boronization. Oxygen from the wall was suppressed significantly and the chemical erosion of graphite tile surface by energetic hygrogen ions/atoms seemed to be reduced also. Some plasma parameters, the stability and reproducibility of discharges and LHCD operating conditions were improved greatly after boronization.