摘要
分析了等离子体控制晶片表面电荷积累的机理和特性,介绍了国外大束流离子注入机在控制晶片电荷积累方面的进展。
The characteristics and mechanism of plasma on controlling wafer charge accumulation are discribed.The progress on the side of large beam current ion implanter in foregin countries is introduced.
出处
《半导体情报》
1998年第3期52-55,共4页
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