n-HgCdTe表面积累层的定量迁移率谱研究

QUANTITATIVE MOBILITY SPECTRUM ANALYSIS OF nHgCdTeACCUMULATED LAYERS

利用定量迁移率谱技术，通过对霍尔系数和电阻率与磁场强度的关系，获得了ｎ－ＨｇＣｄＴｅ光导器件表面积累层中子带电子的浓度和迁移率，结果与Ｓｈｕｂｎｉｋｏｖ－ｄｅＨａｓｓ实验和理论计算的结果非常吻合．

By using quantitative mobility spectrum analysis technique, the density and mobility for each subband of the accumulated layer on the nHgCdTe devices were determined from fielddependent Hall and resistivity data. The results agree well with the shubnikovde Hass measurements and theoretical calculations.