摘要
分别从光源、照明系统、掩模、光刻胶、光刻机、光刻工艺、成本等七个方面对１９３ｎｍ与ｘ射线光刻技术进行了对比分析，介绍了目前它们的一些进展情况，并对它们的应用前景进行了简要分析。
In this paper the comparison between 193nm and xray lithography is made from the aspects of light source,illuminating system,mask,resist,stepper,lithography process and cost some new progress is introduced and thire application prospect is analyzed briefly.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第4期1-4,共4页
Semiconductor Technology
