GeSi/Si多量子阱光波导模特性分析和吸收层结构设计

ANALYSIS AND OPTIMUM DESIGN ON GeSi/Si MQW OPTICAL WAVEGUIDE AND ABSORBTION LAYER

根据普适于任意阱数的方波折射率分布的多量子阱光波导的模场分布函数和模特征方程，分析了在以ＧｅＳｉ／Ｓｉ多量子阱为波导芯、Ｓｉ为覆盖层的光波导结构中．Ｇｅ含量、周期数、占空度、厚度、折射率分布等参量对光波导传播常数的影响．并结合吸收特点对ＭＱＷ吸收层结构进行优化设计．

According to the field distribution function and mode property equation in MQW optical waveguide, the influence of Ge composition, period number and depth on plate waveguide mode property was analyzed. The waveguide was formed by GeSi/Si MQW core and Si cover. GeSi/Si MQW absorber layer structure was optimally designed.