自离子辐照对兆伏注P^+硅中二次缺陷的影响

EFFECTS OF SELF ION IRRADIATION ON SECONDARY DEFECTS IN MeV P + IMPLANTED Si *

用平面透射电子显微术和剖面透射电子显微术以及卢瑟福背散射沟道谱技术研究了兆伏注Ｐ＋硅中的二次缺陷以及自离子辐照对它们的影响．实验结果表明，二次缺陷峰的深度稍大于平均投影射程．实验还发现，用适当能量和剂量的自离子在退火之前辐照兆伏注Ｐ＋硅样品，可以抑制二次缺陷的生成，但如果在退火之后辐照，则会得到相反效果．对此现象的物理原因进行了讨论．另外，还给出了Ｓｉ＋，Ｐ＋在硅中形成二次缺陷带的临界剂量。

Abstract By using plan view and cross sectional transmission electron microscopies and Rutherford backscattering and channeling spectroscopy technologies, the secondary defect in MeV P + implanted Si and the effect of self ion irradiation on them have been investigated. The experimental results showed that the depths of secondary defect peaks are a little bit larger than the mean projected ranges measured and those computed by using program TRIM. The results also pointed out that the self ion irradiation onto the MeV P + implanted Si with a suitable energy and dose before annealing can reduce the secondary defect formation. But if the self ion irradiation is applied after the annealing, the effects will be contrary. The physical reason of these has been discussed. Furthermore, the critical dose of the secondary defect occurring in Si + and P + implanted Si have been presented, and the relation of the critical dose with the ion implantation energy has been also discussed.