摘要
研究了微氮硅单晶在６００～９００℃温区的新施主形成特性，发现氧、氮杂质对新施主有重要影响．明确提出含氮直拉硅中存在不同于传统新施主的以氮硅氧复合体为成核中心的新型氮关新施主ＮＮＤ，其热处理行为类似于普通新施主，但形成特性受氮杂质的较大影响．
Abstract Characters of new donor (ND) between 600￣900℃ in nitrogen doped czochralski silicon (NCZ Si) is investigated. Oxygen and nitrogen impurities are determined to make effect on ND in NCZ Si. It is firstly put forward that the nitrogen related new donor (NND) different from the well known new donor (ND) is formed in nitrogen doped CZ Si. Nitrogen oxygen complex is suggested to be the hetergeneous nucleus of NND which has the similiar heat treatment behavior like ND.
基金
国家自然科学基金
