低温形成栅介质膜电特性的容-压法分析

CV Method Analysis of Electrical Characteristcs of GateDielectric Film Formed By Low Temperature Deposition

采用准静态Ｃ－Ｖ特性和高频Ｃ－Ｖ特性测试技术，结合温偏（Ｂ－Ｔ）实验，测试了等离子体增强化学汽相淀积（ＰＥＣＶＤ）法低温制备的富氮的ＳｉＯｘＮｙ栅介质膜的电学特性（界面态密度、固定电荷密度、介电常数、可动离子密度），结果表明，制备出的栅介质膜性质优良。

The electrical characteristics(interface state density,fixed charge density,movable ion density and dielectric constant)of nitrogenrich SiO_xN_y gate dielectric film fabricated by plasma enhanced chemical vapor deposition(PECVD)were measured with quasistatic CV characteristic and high frequence CV characteristic testing technology combing BT experiment.The results indicate that SiO_xN_y gate dieldectric films with better properties can be fabricated by suitable PECVD low temperature process technology.