摘要
采用真空反应蒸发技术,在有机薄膜基片上制备出高质量的ITO透明导电薄膜,对薄膜的结构和光电特性进行了研究。制备的最佳薄膜在可见光范围的平均透过率达84%,电阻率为8.23×10-4Ωcm,载流子浓度为1.72×1020cm-3。
ITO films were prepared by evaporating In Sn alloys onto the polyester substrates in oxygen.Structure and optoelectrical properties of the deposited films were investigated.ITO films with low electrical resistivity(-8.23×10 -4 Ωcm),high visible transmission(>83%),and high carrier density(-1.72×10 20 cm -3 )can be obtained by suitable controlling the deposition parameters.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1998年第2期198-201,共4页
Acta Energiae Solaris Sinica
基金
山东省自然科学基金