射频溅射沉积 TaO_x 薄膜离子导体性能

THE IONIC CONDUCTIVITY OF THE RF REACTIVE SPUTTERED TaO X FILMS

利用射频反应溅射沉积方法在不同氧含量下以ＷＯ３／ＩＴＯ／Ｇｌａｓｓ为基体，制备了一系列厚度大于２００ｎｍ的ＴａＯｘ薄膜，并用Ａｒｎｏｌｄｕｓｓｅｎ方法检测离子导电性能。结果表明，当溅射功率为１５０Ｗ、氧含量１０～８０％条件下制备的ＴａＯｘ薄膜均为离子导体。其中氧含量２０—４０％时离子导电性能最佳。用ＴａＯｘ薄膜作为离子导体制备的Ａｌ／ＮｉＯｘ／ＴａＯｘ／ＷＯｘ／ＩＴＯ／Ｇｌａｓｓ电致变色器件，其着色态在可见光谱范围（０．３８—０．７８μｍ）的平均反射比为１１．２％，漂白态时对应的平均反射比可达８３．２％。本文还讨论了ＴａＯｘ离子导体的离子导电机理。

The TaO x films with thickness greater than 200nm have been made on the substrate of WO 3/ITO/Glass by rf reactive sputtering processes with various oxygen contents.The ionic conductivity of the films was tested by Arnoldussen method and tri electrode cell with X Y recorder.The results show that the TaO x films are ionic conductor under the conditions of 150W of depositing power and oxygen contents between 10% and 80%.The films have optimum ionic conductivity at the oxygen contents of 20% and 40%.The electrochromic device for Al/NiO x/TaO x/WO 3/Glass was made. The average reflectance of the device in visible light (0.38μm～0.78μm)is 11.2% at colored state and 83.2% at bleached state.