摘要
分析了非掺锑化镓单晶片的化学抛光机制和影响获得表面质量良好的非掺锑化镓单晶片的因素，得到了非掺锑化镓的抛光工艺参数。利用该工艺可以制备表面光洁、平整、无缺陷的非掺锑化镓单晶抛光片。
The mechanism of CMP of non doped GaSb and affecting factors is analysed.The parameters of non doped GaSb polishing are obtained.Using this technology the smoothness,flatness,and non defect non doped GaSb surface can be produces.
出处
《半导体情报》
1998年第3期59-63,共5页
Semiconductor Information
关键词
非掺
抛光液
抛光温度
抛光压力
锑化镓
Non doped GaSb Polishing solution Polishing temperature Folishing pressure
