摘要
本文通过测量ＳＩ－ＧａＡｓ抛光晶片及其本体（腐蚀了晶片的亚表面损伤层）的Ｘ射线回摆曲线ＦＷＨＭ，与抛光晶片的ＴＥＭ观测相结合，作出晶片回摆曲线ＦＷＨＭ的比率Ｒ与ＴＥＭ观测的晶片亚表面损伤层厚度Ｄ的关系曲线，建立了一种定量检测ＳＩ－ＧａＡｓ抛光晶片的亚表面损伤层厚度技术，文中将对这种技术进行描述并作讨论．
Abstract A quantitative measurement technique of subsurface damage layer thickness in polished SI GaAs wafers has been obtained by combining X ray rocking curve FWHM with TEM observations. It is given that the rate ( R ) of X ray rocking curve FWHM of the polished SI GaAs wafer and its body (subsurface damage layer is etched) correlates with the thickness( D ) of the same polished wafers subsurface damage layer observed by TEM. In this paper, the technique is described and discussed.
