摘要
本文基于电容耦合多个纳米隧道结串联结构的半经典模型，研究了三结单电子晶体管的基本方程，分析了其Ｉ－Ｖ特性，并对三结与两结单电子晶体管的特性进行了比较．结果表明，单电子晶体管的特性与常规晶体管有很大的差别，且三结单电子晶体管与两结单电子晶体管相比较。
Abstract On the basis of semiclassical model for capacitance coupled nanometer tunneling junction array(NTJA), we study the basic equations for three junction single electron transistor (SET) and its I V characteristics, compare it with two junction SET. Our results indicate obvious differences between the characteristics of SETs and conventional transistor. Three junction SETs seem to have higher sensitivity and be able to resist stronger electromagnetic disturbance.
基金
国家自然科学基金
