AlGaAs/GaAs HBT E-M 模型直流参数的修正

Modification of DC Parameters in the AlGaAs/GaAs HBT E M Model

在ＳｉＢＪＴＥＭ模型基础上，对其直流参数进行了修正，使其适应于ＡｌＧａＡｓ／ＧａＡｓＨＢＴ的直流特性：电流增益不是常量和自热效应．计算机模拟值与实测值在中电流和较大电流时相当吻合，这一结果支持了ＨＢＴ电路模拟．

On the base of Si BJT E M model, we modifies the DC parameters in order to let the model be suit for N p n AlGaAs/GaAs HBTs DC characters: the current gain β F is not a constant and the self heating effects. The simulating results support the measurements when the HBT is operated during the middle and bigger currents.