摘要
利用ＬＰ－ＭＯＣＶＤ外延生长ＡｌＧａＩｎＰＤＨ橙色发光二极管，２０ｍＡ工作条件下发光波长峰值在６２８ｎｍ，ＦＷＨＭ为２６ｎｍ，１５°（２θ１／２）视角封装后亮度达到３１０ｍｃｄ；８０ｍＡ工作条件下亮度达到１０００ｍｃｄ。并且分析了生长过程中杂质向有源区扩散对发光光谱的影响。
LPMOCVD technology is employed to manufacture AlGaInP orange light emitting diodes.At 20mA 628nm wavelength light emitting is obtained and the FWHM is 26nm.310mcd and 1000mcd of brightness have been reached under 20mA and 80mA respectively for the light emitting diode lamps with 15°viewing angle(2θ1/2).The effect of the diffusion of dopants toward the active layer on luminous spectrum is discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第4期10-12,共3页
Semiconductor Technology
