薄膜电致发光器件SiO_2加速层的电子输运性质

TRANSPORTION OF ELECTRON IN THE ACCELERATING LAYER aSiO2 OF THIN FILMELECTROLUMINESCENT DEVICE

考虑了非晶效应和非晶无序弹性散射的影响，通过ＭｏｎｔｅＣａｒｌｏ方法模拟电子在薄膜电致发光器件（ＴＦＥＬ）的ＳｉＯ２加速层的散射过程，从理论上描述了ＳｉＯ２层的加速作用与电流倍增效应，获得了电子平均能量与场强的关系曲线、电离率、电流倍增因子。

he accelerating action and the current multiplication of SiO2 used in thin film electroluminescent device were studied theoretically using the Monte Carlo method to simulate the process of electron scattering in SiO2. The amorphous effect and the elastic scattering of disorder were considered. All the properties, such as the relation curve of the electron average energy and the electric field strength, ionization rate, current multiplication coefficient, coincided with the experimental data perfectly.