SIT耐压容量的控制和工艺调节

Control on VoltageWithstandCharacteristics of Static Induction Transistor

对静电感应晶体管（ＳＩＴ）栅－漏、栅－源击穿电压的控制和工艺调节方法进行了探讨，对栅－源连通和栅－漏耐压的钳位问题进行了分析。

In this paper the general control principle and method on GD and GS breakdown voltages are reported and switchon of gatesource and clampon of gatedrain are analyzed also.