超薄栅介质膜生长前硅表面处理的研究

The Study of Si SurfaceTreating BeforeGrowing UltraThin Gate Dielectric Films

在超薄栅介质膜的制备技术中，膜生成前，用稀ＨＦ酸进行表面处理，能使生成的超薄膜均匀性、完整性提高，从而使膜的击穿、漏电得到改善。

Surfacetreating using the dilute HF before growth of dielectric films has been investigated in the preparation of ultrathin gate dielectric films.Surfacetreating can increase the uniformity and the integrality of ultrathin films,then improve breakdown characteristics and decrease leakage current of the films.