衬底温度对ZnO：Al薄膜结构和性能的影响

Effects of Substrate Temperature on Structure and Properties of ZnO:Al Thin Films

利用射频磁控溅射法采用氧化锌铝(98%ZnO+2%Al2O3)为靶材在普通载玻片上制备了ZAO(ZnO:Al)薄膜,研究了衬底温度对薄膜晶体结构,电学和光学性能的影响。利用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析,利用分光光度计和电阻测试仪分别测试了薄膜的光电学性能。结果表明,衬底温度对薄膜结构及光电学性能影响最大。溅射功率120W、衬底温度300℃、工作气压0.6Pa制得的薄膜具有良好的光电学性能(可见光平均透过率为79.49%(考虑衬底的影响,电阻率为4.99×10-2Ω.cm)。

Thin films of transparent conductive Al doped ZnO was deposited on glass substrate by RF magnetron sputtering method with target of AlZnO （98% ZnO ＋ 2% Al2O3 ）, the effects of substrate temperature on structure and optical and electronical properties of ZnO ： Al thin films were investigated by XRD, SEM, UV-visble spectrophotometry and four-point probe method. Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably. The films prepared at substrate temperature of 300 ℃ with RF power of 120 W and working pressure of 0.6 Pa have good optical and electrical properties （average transmittance of 79.49 % in the range of visible light and resistivities of 4.99 ×10^-2Ω·cm） .