摘要
介绍了采用传统的三台面工艺,利用湿法选择腐蚀形成发射极-基极自对准的InGaAs/InP单异质结双极性晶体管(SHBT)技术实现传输速率为10Gb/s跨阻放大器。其中SHBT获得了在Ic=10mA,Vce=2V时,fT和fmax分别为60、75GHz,电流密度为100kA/cm2,击穿电压大于3V;跨阻放大器的跨阻增益为58dBΩ,灵敏度为-23dBm,3dB带宽为8.2GHz。该单片跨阻放大器可广泛应用于光纤通信。
The design and realization of a 10 Gb/s transimpedance amplifier were reported based on base-emitter self-align and InGaAs/InP SHBT triple mask process, fmax is about 75 GHz with fT of 60 GHz for 2 μm × 10 μm emitter area devices at Ic = 10 mA and Vce = 2 V, while BVceo 〉 3 V. More than 58 dBΩ gain of the transimpedance amplifier is achieved, the sensitivity is less than - 23 dBm, and 3 dB bandwith to 8.2 GHz. The amplifier can be widely used in fiber communication.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第7期701-703,共3页
Semiconductor Technology
