退火温度对高纯Al-1wt% Si合金组织及性能的影响

Effect of annealing temperature on microstructure and performance of high purity Al-1wt% Si alloy

用光学显微镜、扫描电镜观察,硬度、电导率的测试,观察高纯Al-1wt%Si合金中共晶相分布随再结晶退火温度的变化,研究其对材料组织、硬度及电导率的影响。结果表明,合金开始再结晶温度为300℃,晶粒开始长大温度为450℃;合金硬度值随共晶Si相固溶量的增大而升高,电导率随其固溶量的增大而降低;共晶Si相在α-Al基体中固溶时,退火温度高于450℃扩散系数增大、510℃达到固溶极限。

With the help of optical microscopy, scanning electron microscopy, hardness test and electrical conductivity measurement, the distribution variation of the eutectic phase with annealing temperature of recrystallization in Al-lwt% Si alloy was observed and effect on microstructure and performance of the alloy was investigated. The results show that the initial temperature of recrystallization is 300 ~C ; the initial temperature of grain growth is 450 ~C. The hardness of the alloy increases with the solid solubility of Si eutectic phase increasing, while the electrical conductivity decreases. When the Si eutectic phase is solved in α-A1 substrate, the diffusion coefficient increases while the annealing temperature is higher than 450℃, and the solid solubility reaches maximum at 510 ℃.