射频磁控反应溅射氧化硅薄膜微结构和电击穿场强研究

Research on the Microstructure and Electric Breakdown Strength of Silicon Oxide Thin Film Deposited by RF Magnetron Reactive Sputtering

采用射频磁控反应溅射法在单晶硅片上制备了氧化硅(SiOx)薄膜,分析了薄膜的主要成分,研究了制备工艺对薄膜表面形貌和电击穿场强的影响。结果表明:薄膜的主要成分为氧化硅(SiOx);退火前后,薄膜的表面粗糙度由原来的1.058 nm下降至0.785 nm,峰与谷之间的高度差由原来的7.414 nm降低至5.046 nm;薄膜的电击穿场强随溅射功率的增加先增大后减小,通过800℃/100 s的快速热退火,在各种射频功率下制备的薄膜电击穿场强都有明显升高,薄膜的绝缘性能显著增强。

Silicon oxide films were prepared by RF magnetron reactive sputtering on a monocrystalline silicon wafer; and the composition and influence of the preparation process on the surface morphology and electric breakdown strength were studied. The results show that the main composition is silicon oxide; the surface roughness decreases from 3.058 nm to 1.785 nm and the height difference between hill and valley of the surface drops from 7.414 nm to 5.046 nm after rapid annealing; the electric breakdown strength increases with the increase of sputtering power at first and then decreases; the electric breakdown strength of the films prepared by different RF power all increases after a 800 ℃ rapid thermal anneal for 100 s; the insulating properties were thus considerably improved.