摘要
针对LDO稳定性的问题,在分析LDO的环路频率特性及其与负载电流关系的基础上,提出了一种跟踪负载电流变化的LDO频率补偿的新结构,使LDO的稳定性不受负载电容的等效串联电阻和负载电流的影响.采用SMIC0.5μm工艺进行仿真后表明,此款电路在整个负载范围内能显著提高LDO的频率稳定性和瞬态响应特性.
Based on the stability of LDO, after analysised the relationship between loop frequency characteristic and load current, a novel structure based on the dynamic frequency compensation for the low dropout voltage regulators are presented, which make the stability of the LDO linear regulator undependent on the effect of load current and load capacitor＇ s equivalent serial resistance （ESR） . The circuit was implemented with SMIC,0.5μm CMOS process technology. Simulation results indicate an improved frequency stability and transient response in full load range.
出处
《微电子学与计算机》
CSCD
北大核心
2009年第7期123-126,共4页
Microelectronics & Computer
关键词
LDO
频率补偿
瞬态响应
电压缓冲器
low dropout voltage regulator
frequency compensation
transient response
voltage buffer
