摘要
利用多种实验手段对电子辐照直拉硅退火过程中辐照缺陷的施主效应进行了研究,同时探讨了不同辐照剂量、初始氧含量以及预处理对辐照施主形成的影响.实验结果表明,电子辐照直拉硅后其电阻率迅速增加,低温退火即可恢复真实值;辐照施主是氧施主-缺陷的复合体,其激活温度在750℃左右,低温预处理有助于辐照施主的异质形核.
Behavior of the irradiation donor （ID） after annealing in electron irradiated CZ-Si has been studied by using various kinds of experimental means. The effect of electron doses, original oxygen concentration and preannealing on the ID formation is also discussed. It is shown that the resistivity increase sharply after electron irradiated and recovere real value in irradiated samples annealed at low temperature. It is considered that the structure of ID is the oxygen donor defect complex which is activated at 750 ℃ annealing temperature. In addition, the inhomogeneous nucleation of ID is enhanced by low temperature preannealing.
出处
《宁夏大学学报（自然科学版）》
CAS
北大核心
2009年第2期132-134,138,共4页
Journal of Ningxia University(Natural Science Edition)
基金
国家自然科学基金资助项目(50472034)
河北省自然科学基金资助项目(E2005000048)
关键词
电子辐照
辐照缺陷
施主浓度
电阻率
electron irradiation
irradiation defects
donor concentration
resistivity
