摘要
采用射频磁控溅射沉积方法,结合氩气氛退火工艺制备了热红外探测VO2薄膜,通过优化工艺,制备出化学计量比接近理论值、高质量的VO2薄膜.利用X射线光电子能谱(XPS)对薄膜的相结构、组分进行了分析.测试结果显示,V205薄膜在退火温度450℃、退火2h条件下,制备得到的薄膜成分主要是VO2相.
Thermal infrared detecting VO2 film has been prepared by radio frequency megnetron sputtering deposition and argon atmosphere annealing. High-quality VO2 film of stoichiometric ratio approaching theory value has been prepared by optimization process. XPS has been used to analyzed film＇s phase structure and composition. The result shows that when at 450℃ and 2h of annealing, the main composition of the prepared film is VO2 phase.
出处
《郧阳师范高等专科学校学报》
2009年第3期47-49,共3页
Journal of Yunyang Teachers College
关键词
磁控溅射
VO2薄膜
氩气氛退火
XPS
megnetron sputtering
VO2 film
argon atmosphere annealing
XPS
