摘要
利用逃逸电子的输运来诊断TEXTOR托卡马克上等离子体大破裂下的磁涨落水平。TEXTOR托卡马克采用包含产生逃逸影响的零维模型模拟了等离子体大破裂下的电流演化.根据模型参数-逃逸电子的损失速率,我们得到了TEXTOR托卡马克上的磁涨落水平。该磁涨落水平大约在10-5量级,磁涨落水平随注入等离子体中原子数目的增加而增强。
The runaway transport is used to probe the magnetic fluctuation level for TEXTOR disruption plasmas. A zero dimensional model of the current quench including the generation of runaway electrons has been applied to simulate the experimental current evolutions during major disruptions [ Plasma Phys. Control. Fusion 50 (2008) 1050071- According to the loss rate of runaway electrons used in the fitting parameter of the zero dimensional model, the magnetic fluctuation level in TEXTOR is derived. It is found that the magnetic fluctuation level is in the order of 10^-5, and it increases with the atom number mixed into the plasma.
出处
《云南师范大学学报(自然科学版)》
2009年第4期50-53,共4页
Journal of Yunnan Normal University:Natural Sciences Edition
基金
教育部科学技术研究重点资助项目(208129)
第十一届霍英东青年教师基金资助项目(111006)
云南省自然科学基金资助项目(2007A044M)
关键词
逃逸电子
磁涨落
runaway electron, magnetic fluctuation