摘要
Spin splitting of the Aly Ga1-y As/GaAs/A1x Ga1-x As/A1-y Ga1-y As （x ≠ y） step quantum wells （ Q Ws） has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry （SIA）. The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.
Spin splitting of the Aly Ga1-y As/GaAs/A1x Ga1-x As/A1-y Ga1-y As （x ≠ y） step quantum wells （ Q Ws） has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry （SIA）. The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.
基金
Supported by the National Basic Research Program of China under Grant Nos 2006CB921607 and 2006CB604908, and the National Natural Science Foundation of China under Grant No 60625402.
