摘要
We develop a physies-based charge-control lnP double hereto junction bipolar transistor model including three important effects： current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As a result, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.
We develop a physies-based charge-control lnP double hereto junction bipolar transistor model including three important effects： current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As a result, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.
