摘要
在利用氧离子注入工艺制备SOI材料的过程中，发现了一种“纳米网状”的结构缺陷。利用透射电镜、选区电子衍射和能谱分析对该缺陷进行了研究。结果表明，该缺陷呈网状，化学成分为硅和氧。初步研究认为，氧离子注入硅中所产生的穿通位错是形成该类缺陷的主要原因。
A new ＂nano-netted microstructure＂ defect is detected in separation by implanting oxygen（SIMOX） process. The defect is studied by using transmission electron microscope（TEM）,selected area electron diffraction（SAD） and energy dispersive X-ray（EDX）. The results show that the defect has many net cells,mainly comprised of silicon and oxygen. It is thought that the formation of this type of defect is related to the line dislocation in oxygen ion implantation preliminarily.
关键词
晶体缺陷
离子注入
位错
透射电子显微镜
crystalline defects, ion implantation, dislocation, transmission electron microscope
